Diamond coated silicon wafer

 Diamond coated silicon wafer









www.diasemi.us

Comments

Post a Comment

Popular posts from this blog

Growth of Heteroepitaxial CVD Diamond Films on Ir/YSZ/Si(001) for Detector Applications*

 Growth of Heteroepitaxial CVD Diamond Films on Ir/YSZ/Si(001) for Detector Applications*  C. Stehl1 , S. Gsell1 , M. Fischer1 , M. Schreck1,#, E. Berdermann2 , M. S. Rahman2 , and M. Träger2 1 Universität Augsburg, Germany; 2GSI, Darmstadt, Germany In the framework of the CARAT collaboration, which executes work package 15 of the EU FP7 “HadronPhysics2” project, the diamond group at the University of Augsburg is responsible for the development and growth of heteroepitaxial diamond films, which shall be used in particular for tracking and ToF measurements of heavy ions and minimum ionising particles. Motivation For future particle accelerator experiments, e.g. at FAIR, we are developing novel, advanced diamond sensors grown by chemical vapour deposition (CVD), capable on one hand of replacing the commonly used silicon tracking devices and being on the other hand an advantageous alternative to polycrystalline or single-crystal diamond sensors used so far in beam diagnostics and...
Read more

Heterogeneous integration of thick GaN and polycrystalline diamond

  Heterogeneous integration of thick GaN and polycrystalline diamond at room temperature through dynamic plasma polishing and surface-activated bonding Direct heterogeneous integration of GaN on diamond enhances device performance and reliability for high-power applications, while the implementation on thick GaN films and polycrystalline diamond (p-diamond) substrates remains challenging. In this study, the direct bonding between thick GaN films ( ∼ 370 μm) and p-diamond substrates was achieved. A dynamic plasma polishing (DPP) technique was adopted on the diamond to flatten surficial spikes from maximum 15 nm to 1.2 nm, obtaining a smooth surface with 0.29 nm Ra, achieving a robust GaN/diamond bonding with high bonding rate of ∼ 92% at room temperature combining the surface-activated bonding (SAB) method. The chemical status, thermal stress, and interfacial microstructures of GaN/diamond heterostructures were analyzed, revealing a residual stress of ∼ 200 MPa at the GaN/diamond ...
Read more