Diamond Semiconductor

  Growth of diamond in liquid metal at 1 atm pressure Natural diamonds were (and are) formed (thousands of million years ago) in the upper mantle of Earth in metallic melts at temperatures of 900–1,400 °C and at pressures of 5–6 GPa (refs.  1 , 2 ). Diamond is thermodynamically stable under high-pressure and high-temperature conditions as per the phase diagram of carbon 3 . Scientists at General Electric invented and used a high-pressure and high-temperature apparatus in 1955 to synthesize diamonds by using molten iron sulfide at about 7 GPa and 1,600 °C (refs.  4 , 5 , 6 ). There is an existing model that diamond can be grown using liquid metals only at both high pressure and high temperature 7 . Here we describe the growth of diamond crystals and polycrystalline diamond films with no seed particles using liquid metal but at 1 atm pressure and at 1,025 °C, breaking this pattern. Diamond grew in the subsurface of liquid metal composed of gallium, iron, nickel and silicon, by cataly...

Ultra High Thermal Conductive Diamond Wafer  

Single Crystal Diamond www.diasemi.us  

Optical Grade Diamond Window www.diasemi.us  

CVD Diamond on Si Wafer  www.diasemi.us  

  β-Ga2O3 film on a diamond substrate www.diasemi,us   β-Ga2O3 is a promising next generation of semiconductor materials  of a large 4.8-eV bandgap, controllable  n -type doping with Si/Sn/Ge, and relatively high electron mobility of ~ 200 cm 2 /V s ,however the material is with relatively low thermal conductivity ,high thermal conductive diamond substrate might be a perfect enabler for the combination to be a great candidate for next success. Direct bonding of β-Ga2O3 film on a diamond substrate at 250ºC under atmospheric conditions was recently developed. The β-Ga2O3 surface before bonding was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3anddiamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250ºC, atomic bonds were formed without voids, cracks, or severe crystallinity damages.    Direct bonding of β-Ga2O3 and di...

  Heterogeneous integration of thick GaN and polycrystalline diamond at room temperature through dynamic plasma polishing and surface-activated bonding Direct heterogeneous integration of GaN on diamond enhances device performance and reliability for high-power applications, while the implementation on thick GaN films and polycrystalline diamond (p-diamond) substrates remains challenging. In this study, the direct bonding between thick GaN films ( ∼ 370 μm) and p-diamond substrates was achieved. A dynamic plasma polishing (DPP) technique was adopted on the diamond to flatten surficial spikes from maximum 15 nm to 1.2 nm, obtaining a smooth surface with 0.29 nm Ra, achieving a robust GaN/diamond bonding with high bonding rate of ∼ 92% at room temperature combining the surface-activated bonding (SAB) method. The chemical status, thermal stress, and interfacial microstructures of GaN/diamond heterostructures were analyzed, revealing a residual stress of ∼ 200 MPa at the GaN/diamond ...